inchange semiconductor isc rf product specification isc website www.iscsemi.cn 1 isc silicon npn planar epitaxial overlay transistor 2N3866 description this type is primarily intended for class-a, b or c amplifiers, frequency multiplier and oscillator circuits. high gain bandwidth product f t = 500 mhz (min.) low collector capacitance; c c = 3 pf max. applications designed for use in output, driver or pre-driver stages in vhf and uhf equipment. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 55 v v cer collector-emitter voltage r be = 10 55 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 3.5 v i c collector current-continuous 0.4 a p c collector power dissipation @t c =25 3.5 w t j junction temperature 200 t stg storage temperature range -65~+200
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 2 isc silicon npn planar epitaxial overlay transistor 2N3866 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma; i b = 0 30 v v (br)cer collector-emitter breakdown voltage i c = 5ma; r be = 10 55 v v (br)cbo collector-base breakdown voltage i c = 0.1ma; i e = 0 55 v v (br)ebo emitter-base breakdown voltage i e = 0.1ma; i c = 0 3.5 v v ce( sat ) collector-emitter satu ration voltage i c = 100ma; i b = 20ma 1.0 v i ceo collector cutoff current v ce = 28v; i b = 0 20 a h fe-1 dc current gain i c = 50ma ; v ce = 5v 10 200 h fe-2 dc current gain i c = 360ma ; v ce = 5v 5 f t current-gain?bandwidth product i c = 50ma; v ce = 15v,f = 200mhz 500 mhz c c output capacitance i e = 0; v cb = 28v; f= 1mhz 3 pf
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